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Journal of Applied Physics : Transitions of epitaxially lifted-off bulk GaAs and GaAs/AlGaAs quantum well under thermal-induced compressive and tensile strain

By C. M. N. Mateo, J. J. Ibañez, J. G. Fernando, J. C. Garcia, K. Omambac et al

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Book Id: WPLBN0002169377
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 25 November 2008

Title: Journal of Applied Physics : Transitions of epitaxially lifted-off bulk GaAs and GaAs/AlGaAs quantum well under thermal-induced compressive and tensile strain  
Author: C. M. N. Mateo, J. J. Ibañez, J. G. Fernando, J. C. Garcia, K. Omambac et al
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Journal of Applied Physics Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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APA MLA Chicago

N. Mateo, J. J. Ibañez, J. G. Fernando, J. C. Garcia, K. Omambac Et A, C. M. (n.d.). Journal of Applied Physics : Transitions of epitaxially lifted-off bulk GaAs and GaAs/AlGaAs quantum well under thermal-induced compressive and tensile strain. Retrieved from http://worldebookfair.com/


Description
Description: Low temperature photoluminescence and reflectance measurements on epitaxially lifted-off (ELO) bulk GaAs and GaAs/AlGaAs multiple quantum wells (MQWs) bonded to Si and MgO substrates are reported. Photoluminescence measurements indicate no strain at room temperature for the ELO bulk GaAs film but show biaxial strain at 10 K. Si-bonded films undergo tensile strain, while films with MgO host substrates experience compressive strain. Reflectance measurements at 10 K show that light hole band is closer to the conduction band for the tensile strained film. In GaAs MQW ELO films, the separation of the heavy hole and light hole band is reduced in tensile strained films by 4.7 meV, corresponding to a strain ε = −0.7±0.05×10−3 and stress X = 0.9±0.05 kbar (90±5 MPa). For compressively strained films, this separation is enhanced by 3.9 meV, equivalent to a strain ε = 0.6±0.05×10−3 and X = 0.8±0.05×10−3 kbar (80±5 MPa). The findings demonstrate that ELO is an effective technique to introduce tensile and compressive strain in GaAs heterostructures and is appropriate for strain-related spectroscopy.

 

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