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Journal of Applied Physics : Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films

By G. Scardera, T. Puzzer, G. Conibeer, and M. A. Green

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Book Id: WPLBN0002169445
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 19 November 2008

Title: Journal of Applied Physics : Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films  
Author: G. Scardera, T. Puzzer, G. Conibeer, and M. A. Green
Volume: Issue : November 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection, Journal of Applied Physics Collection
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Publisher: American Institute of Physics

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T. Puzzer, G. Conibeer, And M. A. Gree, G. S. (n.d.). Journal of Applied Physics : Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films. Retrieved from http://worldebookfair.com/


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Description: A correlation between bonding changes in silicon-rich silicon nitride films, subjected to high temperature annealing under N2 ambient, and the formation of silicon nanocrystals is presented. The postannealing appearance of a shoulder between 1000 and 1100 cm−1 in the Fourier transform infrared (FTIR) spectra of silicon-rich silicon nitride films is attributed to a reordering in the films toward an increased SiN4 bonding configuration resulting from the precipitation of silicon nanocrystals. The FTIR monitoring of bonding changes in these films allows for the indirect verification of silicon nanocrystal formation.

 

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